Silicon nitride substrate IGBT
The high strength and high thermal conductivity silicon nitride ceramic substrate produced by our company has a bending strength 2-3 times that of aluminum nitride ceramic substrate. Without the occurrence of porcelain cracking, the reliability of the substrate is improved; the thermal conductivity of the thick copper substrate is 3-4 times that of the alumina ceramic substrate, which greatly improves the heat dissipation performance of the substrate; Stronger, the overall heat dissipation performance of the substrate is better, the thermal resistance is lower, and the temperature shock resistance is stronger.
Silicon nitride ceramic substrate has the characteristics of high strength, high thermal conductivity, and high reliability. It can be used to make circuits on the surface by wet etching process, and is a substrate material for high reliability electronic substrate module packaging after surface plating. , Is the preferred substrate material for the new 1681 power control module for electric vehicles. In addition, the ceramic substrate industry also involves LED, fine ceramic preparation, thin film metallization, yellow light lithography, laser forming, electrochemical plating, optical simulation, microelectronics welding and other fields. The products are in power transmitters, photovoltaic devices, and IGBT modules. , Power thyristors, resonator bases, semiconductor packaging substrates and other high-power optoelectronic and semiconductor devices have a wide range of applications.
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